EFFECT OF DOPING ON THE MOBILITY OF SEMICONDUTINGSINGLE-WALLED CARBON NANOTUBES

Abstract

The single walled carbon nanotube as a 1-D device is studied by evaluating the various electrical
parameters such as mobility, velocity, critical electric field etc. Comparison of these parameters
eventually reveals that nano-devices are ideal replacement for current 2-D solid state silicon
devices. Monte Carlo simulation technique was used to evaluate above parameters for both
intrinsic as well as extrinsic carbon nanotubes. Thermal analysis showed that carbon nanotubes
exhibit similar trend as that of silicon. It is also found that carbon nanotubes devices exhibits
exceptionally high mobility in order of 10^5 (cm^2/V-s).the main factor governing the mobility
in case of carbon nanotubes devices is the electron phonon interaction.